Structure and light emission of Si-rich Al₂O₃ and Si-rich-SiO₂ nanocompositesKHOMENKOVA, L; KOLOMYS, O; BARAN, M et al.Microelectronic engineering. 2014, Vol 125, pp 62-67, issn 0167-9317, 6 p.Conference Paper

Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuitsOSTERMAY, I; THIES, A; TILLACK, B et al.Microelectronic engineering. 2014, Vol 125, pp 38-44, issn 0167-9317, 7 p.Conference Paper

Selected papers from the 6th International SiGe Technology and Device Meeting (ISTDM 2012)KOESTER, Steven J; KING LIU, Tsu-Jae; HARTMANN, Jean-Michel et al.Solid-state electronics. 2013, Vol 83, issn 0038-1101, 120 p.Conference Proceedings

Epitaxial growth and anisotropic strain relaxation of Ge_1―xSn_x layers on Ge(110) substratesASANO, Takanori; SHIMURA, Yosuke; TAOKA, Noriyuki et al.Solid-state electronics. 2013, Vol 83, pp 71-75, issn 0038-1101, 5 p.Conference Paper

Low temperature RPCVD epitaxial growth of Si_1―xGe_x using Si₂H₆ and Ge₂H₆WIRTHS, S; BUCA, D; TIEDEMANN, A. T et al.Solid-state electronics. 2013, Vol 83, pp 2-9, issn 0038-1101, 8 p.Conference Paper

Behavior of N atoms after thermal nitridation of Si_1―xGe_x surfaceKAWASHIMA, Tomoyuki; SAKURABA, Masao; TILLACK, Bernd et al.Thin solid films. 2012, Vol 520, Num 8, pp 3392-3396, issn 0040-6090, 5 p.Conference Paper

Characterization and analysis of epitaxial silicon phosphorus alloys for use in n-channel transistorsWEEKS, K. D; THOMAS, S. G; DHOLABHAI, P et al.Thin solid films. 2012, Vol 520, Num 8, pp 3158-3162, issn 0040-6090, 5 p.Conference Paper

Gold nanocluster distribution on faceted and kinked Si nanowiresBOUKHICHA, Rym; VINCENT, Laetitia; RENARD, Charles et al.Thin solid films. 2012, Vol 520, Num 8, pp 3304-3308, issn 0040-6090, 5 p.Conference Paper

Influence of Al co-deposition on the crystal growth of Co-based Heusler-compound thin films on Si(111)OKI, Soichiro; YAMADA, Shinya; MURAKAMI, Tatsuhiko et al.Thin solid films. 2012, Vol 520, Num 8, pp 3419-3422, issn 0040-6090, 4 p.Conference Paper

Laser assisted formation of binary and ternary Ge/Si/Sn alloysSTEFANOV, S; CONDE, J. C; BENEDETTI, A et al.Thin solid films. 2012, Vol 520, Num 8, pp 3262-3265, issn 0040-6090, 4 p.Conference Paper

Low threading dislocation Ge on Si by combining deposition and etchingYAMAMOTO, Yuji; KOZLOWSKI, Grzegorz; ZAUMSEIL, Peter et al.Thin solid films. 2012, Vol 520, Num 8, pp 3216-3221, issn 0040-6090, 6 p.Conference Paper

Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge₂H₆GENCARELLI, F; VINCENT, B; SOURIAU, L et al.Thin solid films. 2012, Vol 520, Num 8, pp 3211-3215, issn 0040-6090, 5 p.Conference Paper

Site-controlled fabrication of dimension-tunable Si nanowire arrays on patterned (001 )Si substratesCHENG, S. L; LO, C. H; CHUANG, C. F et al.Thin solid films. 2012, Vol 520, Num 8, pp 3309-3313, issn 0040-6090, 5 p.Conference Paper

Layout Scaling of Si_1―xGe_x-Channel pFETsENEMAN, Geert; YAMAGUCHI, Shinpei; ORTOLLAND, Claude et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 8, pp 2544-2550, issn 0018-9383, 7 p.Article

Factors Influencing the Leakage Current in Embedded SiGe Source/Drain JunctionsSIMOEN, Eddy; BARGALLO GONZALEZ, Mireia; TOMASINI, P et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 3, pp 925-930, issn 0018-9383, 6 p.Article

Optimization of laser anneal conditions for implanted shallow p/n-junctionsSONCINI, V; MICA, I; GRASSO, S et al.Microelectronic engineering. 2014, Vol 125, pp 51-57, issn 0167-9317, 7 p.Conference Paper

Charge carrier traffic at self-assembled Ge quantum dots on SiKANIEWSKA, M; ENGSTRÖM, O; KARMOUS, A et al.Solid-state electronics. 2013, Vol 83, pp 99-106, issn 0038-1101, 8 p.Conference Paper

Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structureKATO, Kimihiko; SAKASHITA, Mitsuo; TAKEUCHI, Wakana et al.Solid-state electronics. 2013, Vol 83, pp 56-60, issn 0038-1101, 5 p.Conference Paper

Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drainsHARTMANN, J. M; BENEVENT, V; DUTARTRE, D et al.Solid-state electronics. 2013, Vol 83, pp 10-17, issn 0038-1101, 8 p.Conference Paper

Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallizationYINJIE DING; RAN CHENG; QIAN ZHOU et al.Solid-state electronics. 2013, Vol 83, pp 37-41, issn 0038-1101, 5 p.Conference Paper

Site Selective Integration of III―V Materials on Si for Nanoscale Logic and Photonic DevicesPALADUGU, Mohanchand; MERCKLING, Clement; LOO, Roger et al.Crystal growth & design. 2012, Vol 12, Num 10, pp 4696-4702, issn 1528-7483, 7 p.Article

Doping effects on the stability of stacking faults in silicon crystalsOHNO, Yutaka; TOKUMOTO, Yuki; YONENAGA, Ichiro et al.Thin solid films. 2012, Vol 520, Num 8, pp 3296-3299, issn 0040-6090, 4 p.Conference Paper

Growth of silicon based germanium tin alloysKASPER, E; WERNER, J; OEHME, M et al.Thin solid films. 2012, Vol 520, Num 8, pp 3195-3200, issn 0040-6090, 6 p.Conference Paper

In-situ Ga doping of fully strained Ge_1―xSn_x heteroepitaxial layers grown on Ge(001 ) substratesSHIMURA, Y; TAKEUCHI, S; PETERSEN, D. H et al.Thin solid films. 2012, Vol 520, Num 8, pp 3206-3210, issn 0040-6090, 5 p.Conference Paper

Nickel Schottky junction on epi-Ge for strained Ge metal-oxide-semiconductor field-effect transistors source/drain engineeringLEE, M. H; HSIEH, B.-F; CHANG, S. T et al.Thin solid films. 2012, Vol 520, Num 8, pp 3379-3381, issn 0040-6090, 3 p.Conference Paper